Infineon IRFP4668PBF N-Channel MOSFET - High Power and Efficiency

The Infineon IRFP4668PBF is a high-power N-Channel MOSFET designed to deliver excellent performance and efficiency in various applications. It belongs to the HEXFET® series and is suitable for use as a single FET in circuit designs. With a drain-to-source voltage (Vdss) rating of 200V, this MOSFET can handle high voltage levels, making it suitable for demanding applications. It has a continuous drain current (Id) rating of 130A at 25°C (with case temperature as the reference), allowing for robust power handling capabilities.

IRFP4668PBF N-Channel MOSFET by Infineon - Robust and High-Performance Transistor

The IRFP4668PBF MOSFET features a low on-resistance (Rds On) of 9.7mOhm at a drain current (Id) of 81A and a gate-source voltage (Vgs) of 10V. This low on-resistance minimizes power losses and enhances overall system efficiency. Operating with a gate-source threshold voltage (Vgs(th)) of 5V at an Id of 250µA, this MOSFET requires a drive voltage of up to 10V for optimal performance. It has a maximum gate-source voltage (Vgs) of ±30V, ensuring safe operation within specified limits. The IRFP4668PBF MOSFET has a gate charge (Qg) of 241nC at a gate-source voltage (Vgs) of 10V. This parameter indicates the amount of charge required to switch the MOSFET on and off efficiently.

With an input capacitance (Ciss) of 10,720pF at a drain-to-source voltage (Vds) of 50V, this MOSFET provides a suitable capacitive load for driving circuits. Operating in a wide temperature range from -55°C to 175°C (TJ), the IRFP4668PBF can withstand varying environmental conditions. Its TO-247-3 package allows for through-hole mounting, ensuring secure and reliable connections. The Infineon IRFP4668PBF N-Channel MOSFET is an active product, meaning it is currently available for purchase. With its high power dissipation of 520W (Tc), it can handle substantial power levels effectively.

Technical Features:

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