High-Power MOSFET for Power Applications

Experience the Superior Performance of IRF640NPBF MOSFET

If you're looking for a powerful MOSFET for your power applications, the IRF640NPBF is the perfect choice for you. This high-performance N-channel enhancement-mode transistor is designed to deliver excellent performance with its low on-state resistance of just 0.18 ohms. This MOSFET is capable of handling a maximum current of 18 amperes, which makes it an ideal choice for applications requiring high current handling. Additionally, its maximum voltage rating of 200 volts ensures reliable operation, even under heavy loads. Featuring a rugged and durable design, the IRF640NPBF is built to last. Its package is TO-220AB, which is widely known in the electronics field for its excellent thermal performance. This means it can withstand high temperatures without malfunctioning.

This MOSFET also features a fast switching speed, which makes it highly efficient in any power application. Plus, it is easy to install and can be used in various applications, including motor control, switching regulators, solenoid drivers, and many more.

In summary, if you're looking for a powerful MOSFET for your power applications, the IRF640NPBF is an excellent choice. With its outstanding features and robust design, you can be sure that it will provide you with reliable and efficient performance for years to come.

Technical features:

• Technology: Si
• Mounting Style: Through Hole
• Package / Case: TO-220-3
• Transistor Polarity: N-Channel
• Number of Channels: 1 Channel
• Vds - Drain-Source Breakdown Voltage: 200 V
• Id - Continuous Drain Current: 18 A
• Rds On - Drain-Source Resistance: 150 mOhms
• Vgs - Gate-Source Voltage: - 20 V, + 20 V
• Vgs th - Gate-Source Threshold Voltage: 2 V
• Qg - Gate Charge: 44.7 nC
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 175 C
• Pd - Power Dissipation: 150 W
• Channel Mode: Enhancement
• Packaging: Tube
• Brand: Infineon Technologies
• Configuration: Single
• Fall Time: 5.5 ns
• Forward Transconductance - Min: 6.8 S
• Height: 15.65 mm
• Length: 10 mm
• Product Type: MOSFET
• Rise Time: 19 ns

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