Powerful FQPF6N60C MOSFET Transistor for High-Performance Electronics

Robust and Reliable Component for Superior Electrical Applications

Looking for a robust and high-performance MOSFET transistor for your electronic devices? Look no further than the FQPF6N60C. This transistor is designed to deliver exceptional electrical performance, making it a top choice for a wide range of applications. With a maximum drain current of 6A and a maximum voltage of 600V, the FQPF6N60C can handle even the most demanding applications with ease. Its low on-state resistance and superior switching performance ensure that your device operates efficiently and reliably.

Built to withstand high temperatures and extreme conditions, this transistor is constructed with robust materials and advanced technology. Its low thermal resistance ensures efficient heat dissipation and long-lasting performance, making it a reliable choice for high-performance electronics. Whether you're working on a new electronic design or repairing an existing device, the FQPF6N60C is a powerful and reliable component that will elevate your electrical performance to new heights. Order yours today and experience superior performance and reliability in your electronics projects.

Technical features:

• Technology: Si
• Mounting Style: Through Hole
• Package / Case: TO-220-3
• Transistor Polarity: N-Channel
• Number of Channels: 1 Channel
• Vds - Drain-Source Breakdown Voltage: 600 V
• Id - Continuous Drain Current: 5.5 A
• Rds On - Drain-Source Resistance: 2 Ohms
• Vgs - Gate-Source Voltage: - 30 V, + 30 V
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 150 C
• Pd - Power Dissipation: 40 W
• Channel Mode: Enhancement
• Series: FQPF6N60C
• Packaging: Tube
• Brand: onsemi / Fairchild
• Configuration: Single
• Fall Time: 45 ns
• Forward Transconductance - Min: 4.8 S
• Height: 16.3 mm
• Length: 10.67 mm
• Product Type: MOSFET
• Rise Time: 45 ns

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