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FCH47N60F 47N60F N Channel MOSFET 600 V 47A 417W Through Hole TO-247

Yougou Electronics (Shenzhen) Co., Ltd.
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    Buy cheap FCH47N60F 47N60F N Channel MOSFET 600 V 47A 417W Through Hole TO-247 from wholesalers
     
    Buy cheap FCH47N60F 47N60F N Channel MOSFET 600 V 47A 417W Through Hole TO-247 from wholesalers
    • Buy cheap FCH47N60F 47N60F N Channel MOSFET 600 V 47A 417W Through Hole TO-247 from wholesalers
    • Buy cheap FCH47N60F 47N60F N Channel MOSFET 600 V 47A 417W Through Hole TO-247 from wholesalers

    FCH47N60F 47N60F N Channel MOSFET 600 V 47A 417W Through Hole TO-247

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    Model Number : FCH47N60F
    Brand Name : Original
    Price : Negotiable
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    FCH47N60F 47N60F N Channel MOSFET 600 V 47A 417W Through Hole TO-247

    High Performance MOSFET for Discrete Semiconductor Applications

    Introducing the SuperFET FCH47N6 from onsemi in a TO-247-3 Package


    Looking for a powerful and reliable MOSFET for your discrete semiconductor needs? Look no further than the SuperFET FCH47N6 from onsemi. Designed with cutting-edge MOSFET (Metal Oxide) technology, this N-Channel transistor delivers an impressive drain to source voltage of 600 V and a continuous drain current of 47A at 25°C.


    With a maximum Rds On of just 70mOhm and a maximum gate charge of only 270 nC at 10V, the FCH47N6 provides exceptional efficiency, while the wide operating temperature range (-55°C to 150°C) ensures durability in even the most extreme conditions. This powerful MOSFET is compatible with through-hole mounting and comes in a TO-247-3 package. Don't miss out on the impressive power and reliability of the SuperFET FCH47N6 for discrete semiconductor applications.



    Category

    Discrete Semiconductor Products

    Transistors - FETs, MOSFETs - Single

    Package

    Tube

    Part Status

    Obsolete

    FET Type

    N-Channel

    Technology

    MOSFET (Metal Oxide)

    Drain to Source Voltage (Vdss)

    600 V

    Current - Continuous Drain (Id) @ 25°C

    47A (Tc)

    Drive Voltage (Max Rds On, Min Rds On)

    10V

    Rds On (Max) @ Id, Vgs

    73mOhm @ 23.5A, 10V

    Vgs(th) (Max) @ Id

    5V @ 250µA

    Gate Charge (Qg) (Max) @ Vgs

    270 nC @ 10 V

    Vgs (Max)

    ±30V

    Input Capacitance (Ciss) (Max) @ Vds

    8000 pF @ 25 V

    FET Feature

    -

    Power Dissipation (Max)

    417W (Tc)

    Operating Temperature

    -55°C ~ 150°C (TJ)

    Mounting Type

    Through Hole

    Package / Case

    TO-247-3

    Base Product Number

    FCH47

    Quality FCH47N60F 47N60F N Channel MOSFET 600 V 47A 417W Through Hole TO-247 for sale
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